JPH0523072B2 - - Google Patents

Info

Publication number
JPH0523072B2
JPH0523072B2 JP58172554A JP17255483A JPH0523072B2 JP H0523072 B2 JPH0523072 B2 JP H0523072B2 JP 58172554 A JP58172554 A JP 58172554A JP 17255483 A JP17255483 A JP 17255483A JP H0523072 B2 JPH0523072 B2 JP H0523072B2
Authority
JP
Japan
Prior art keywords
amorphous silicon
film
image sensor
sic
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58172554A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6064465A (ja
Inventor
Hiroyuki Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58172554A priority Critical patent/JPS6064465A/ja
Publication of JPS6064465A publication Critical patent/JPS6064465A/ja
Publication of JPH0523072B2 publication Critical patent/JPH0523072B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP58172554A 1983-09-19 1983-09-19 非晶質シリコンイメ−ジセンサ Granted JPS6064465A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58172554A JPS6064465A (ja) 1983-09-19 1983-09-19 非晶質シリコンイメ−ジセンサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58172554A JPS6064465A (ja) 1983-09-19 1983-09-19 非晶質シリコンイメ−ジセンサ

Publications (2)

Publication Number Publication Date
JPS6064465A JPS6064465A (ja) 1985-04-13
JPH0523072B2 true JPH0523072B2 (en]) 1993-03-31

Family

ID=15944007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58172554A Granted JPS6064465A (ja) 1983-09-19 1983-09-19 非晶質シリコンイメ−ジセンサ

Country Status (1)

Country Link
JP (1) JPS6064465A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065726B2 (ja) * 1986-07-24 1994-01-19 日本電気株式会社 光電変換素子アレ−

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129462A (ja) * 1983-01-14 1984-07-25 Oki Electric Ind Co Ltd 光ラインセンサ
JPS59202663A (ja) * 1983-05-04 1984-11-16 Toshiba Corp 光電変換部材

Also Published As

Publication number Publication date
JPS6064465A (ja) 1985-04-13

Similar Documents

Publication Publication Date Title
US4728370A (en) Amorphous photovoltaic elements
US4329699A (en) Semiconductor device and method of manufacturing the same
US4412900A (en) Method of manufacturing photosensors
US5114498A (en) Photovoltaic device
US4405915A (en) Photoelectric transducing element
JPS639219B2 (en])
US4980736A (en) Electric conversion device
EP0428050B1 (en) Photosensor having an amorphous silicon photoabsorption layer
US4900975A (en) Target of image pickup tube having an amorphous semiconductor laminate
JPS6334632B2 (en])
US5196911A (en) High photosensitive depletion-gate thin film transistor
JPS5897862A (ja) 密着型イメ−ジセンサ
JPS6211792B2 (en])
JPH0523072B2 (en])
JP4187328B2 (ja) 光起電力素子の製造方法
JPH0449787B2 (en])
JPS6322074B2 (en])
JPH08204165A (ja) 積層型固体撮像装置
JPS6322465B2 (en])
JPH0652428B2 (ja) 光導電体
JPS59143379A (ja) 光導電体およびその製造方法
US4704343A (en) Electrophotographic photosensitive member containing amorphous silicon and doped microcrystalline silicon layers
JPS6152581B2 (en])
US4533564A (en) Method of manufacturing an electrophotographic photoreceptor
GB2080025A (en) Semiconductor Photosensor Device